MBRP40045CTL |
RFQ for MBRP40045CTL |
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| Product | Manufacturers | Pack | D/C |
| MBRP40045CTL | ON Semiconductor | - | N/A |
Features |
| • Dual Diode Construction - May be Paralleled for Higher Current Output• Guardring for Stress Protection• Low Forward Voltage Drop• 150°C Operating Junction Temperature• Recyclable Epoxy• Guaranteed Reverse Avalanche Energy Capability• Improved Mechanical Ratings |
|
Rating |
Symbol |
Value |
Unit |
|
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
45 |
V |
|
Average Rectified Forward Current Per Leg (At Rated VR) TC = +100°C Per Device |
IF(AV) |
200 400 |
A |
|
Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz) TC = +100°C |
IFRM |
400 |
A |
|
Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM |
2500 |
A |
|
Peak Repetitive Reverse Surge Current (2 s, 1 kHz) |
IRRM |
2 |
A |
|
Storage Temperature |
Tstg |
55 to +150 |
°C |
|
Operating Junction Temperature |
TJ |
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